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Chinese scientists unveil world's fastest flash memory, "PoX," storing data in 400 picoseconds.
Chinese scientists have created the world's fastest flash memory, named "PoX," which can store one bit of data in just 400 picoseconds.
This non-volatile memory outperforms current volatile technologies and sets a new record.
Developed by Fudan University researchers using innovative graphene technology and AI optimization, the device could significantly enhance the operation of large AI models and reshape storage technology globally.
The findings were published in Nature.
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Científicos chinos revelan la memoria flash más rápida del mundo, "PoX", que almacena datos en 400 picosegundos.