STMicroelectronics launches 4th-gen SiC MOSFET tech for EV traction inverters, targeting power efficiency, density, and robustness.

STMicroelectronics has launched its fourth-generation silicon carbide (SiC) MOSFET technology, aimed at improving power efficiency, density, and robustness for electric vehicle (EV) traction inverters. The 750V class is qualified, with 1200V expected by Q1 2025. The technology also supports high-power industrial applications, enhancing performance and reducing weight in EVs. ST plans further innovations through 2027 to drive mass adoption of electric mobility and sustainability.

September 24, 2024
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